Optical Absorption and Photoluminescence in the Spherical InP/InSb/InP Core/shell/ shell Nano Structure

Abstract

Harutyunyan VA, Kazaryan EM and Hayrapetyan DB

The one particle states of charge carriers are considered in InP/InSb/InPcore/shell/shell spherical quantum nano structure at the regime of strong quantization. The results of numerical calculations for the values of the energy of charge carriers for different values of the thickness of the quantizing layer of InSb are presented. The calculations were performed with allowance for the Kaned is persion for electrons and light holes in the InSb layer. The dependence of the number and position of the energy levels of charge carriers in the quantizing layer of InSb on the width of the well (layer thickness) is shown. The dependence of the absorption coefficient and photoluminescence spectra on the energy of incident light of interband transitions have been investigated. The oscillator strengths and selection rules for these transitions have been obtained. The absorption has a strictly resonant character. By the orbital and azimuthal numbers only diagonal inter band transitions are possible. For the radial number, the transitions between the states with the same radial numbers have the highest intensity.

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