Modeling Arc less Ingap/Gaas Double Junction Solar Cell with Tunneling Junction and Bsf Layer
Abstract
Nemat azimi, Sara ghari, Hassan Rasooli Saghai
The present study addresses the structure of InGaP/GaAs dual-junction (DJ) solar cells by introducing new buffer and back surface field (BSF) layers as well as selecting the appropriate material for the tunnel junction. Different performance parameters including open-circuit voltage (�??oc) short-circuit current density (𝐽�??𝐶), fill factor (𝐹𝐹), and solar cell efficiency (�??) were proposed and extracted for comparison with literature results. Then, I-V characteristic curves for the model were represented in graphs. The mentioned parameters, i.e. open-circuit voltage �??�??𝐶, short-circuit current density 𝐽�??𝐶, fill factor 𝐹𝐹, and solar cell efficiency �?? were, respectively, obtained as 18.50 �??𝐴/�?��??2, 2.862 V, 87/32 percent and 46.23 percent (1sun) under AM1.5G spectrum, which indicates the improvement achieved in this study.