Influence of Variation of Aluminium Doping Concentration and Annealing Temperature on the Structural, Morphological and Dielectric Constant of ZnO Thin Film Grown Using Chemical Bath Deposition Process

Abstract

EI Ugwu, SI Nworie and NEJ Omaghali

The influence of the variation of the aluminium doping concentration, annealing temperature on the Morphological, elemental composition and dielectric constant of chemically bath deposited ZnO thin film was studied in this work for which the characterization was carried out using Electron Microscope (SEM) and X-ray diffractometer (XRD) The dielectric constant was deduced by from the frequency dependent complex electronic dielectric function for which only the real part was considered. The study showed that increase in the concentration of the aluminium coupled with increase in annealing temperature influenced the morphological structure and the composition of the elemental constituents of the grown films.

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