Growth C Axis Zno Nanowires By Upturned Crystalline Growth Method on P-Si(111) Substrate

Abstract

MarwaBakour, Dr.M.A.Batal and Dr.AmirAlhajSakur

The using method a low temperature and low cost growth method of high quality active materials for optoelectronic devices. ZnO nanowire arrays growth on p-Si(111). The effects of thermal annealing on the optical properties of ZnO nanowires were prepared on sol-gel ZnO-seed-coated substrates. Atomic Force Microscopy (AFM) AFM and... AFM images were found at 130 °C well aligned vertically, and the well defined crystallographic planes, providing a strong evidence that the nanowire arrays orientate along the c-axis. The annealing temperature of the ZnO thin film plays an important role on the microstructure of the ZnO grains and then the growth of the ZnO nanowire arrays.From PL spectra, an evident ultraviolet near-band edge emission peak at 382 nm is observed. From (I-V) characteristic that the material behaves p-n junction diode, ideality factors >> 2.0, that was attributed to tunneling via deep levels in the forbidden gap. Impedancespectra shows the spectrum of the Impedance resistance that the curve does not represent a regular semicircle and this indicates that the structure of the material is not regulated granules but rather is in a different form which is the nanowires .

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