Electronic Properties of (B) GaAs/GaAs Heterostructure Capped by Ga2O3

Abstract

Dalanda Slimi, Faouzi Saidi and Hassen Maaref

In this work we performed optical studies of Ga2 O3 /GaAs, BGaAs/GaAs and Ga2 O3 /BGaAs/GaAs epilayers obtained by chemical vapor deposition (MOCVD) at different growth temperatures (580°C and 670°C). This enables the development of heterostructures based on BGaAs/GaAs thin films covered by Ga2 O3 . We focused our research on the influence of power excitation and temperature on the photoluminescence (PL) properties. Ithasshowedthe presence of emission energy around 1.2 eV and a red shift after the deposition of Ga2 O3 on BGaAs/GaAs at low temperature (10K). The power study highlights the dominance of the Ga2 O3 layer during the emission via the donor-acceptor transitions. The evolution of the emission energy temperature for the BGaAs/GaAs thin film allowed us to explain the origin of the excitonic recombination. The luminescence within the new Ga2 O3 /BGaAs/GaAs heterostructure is controlled by the localization of carriers in energy fluctuation potentials created by inhomogeneous distributions of VGa families. We have shown that this proposed heterostructure based on III-V semiconductors could broaden the emission spectrum and henceincreasestheconversion efficiency as the absorption increases.

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