A Novel Design of Heterojunction Double Ferroelectric MOSFET (HDF-MOSFET) with Steep Subthreshold Slope and High Ion/Ioff Current Ratio

Abstract

Mojtaba Hosseinzadeh Sani, Parisa Sami, Mahsa Hassanianzabi

In this work, three novel structures using ferroelectric material are designed and simulated. The proposed structures are Im- proved Priority, Single Ferro (SF-MOSFET), Double Ferro (DF-MOSFET), and Heterojunction Double Ferro (HDF-MOS- FET), respectively. Unlike other structures, these structures have a contact gate and two ferroelectric layers, and an insulation layer between these layers. HfO2 is used instead of the common perovskite ferroelectric layers such as zirconium lead titanate (PbZrTiO3 ) and strontium bismuth tantalum (SrBi2 Ta2 O9 ), which makes it compatible with the CMOS process as well as the scalability of the device. Ferroelectric layers, Insulation and Ferroelectric layers are stacked (F-I-F). Placing double ferro layers in the form of a stack increases the polarization effects and improves the application of the structure in memory. The memory performance can be saved even after the power is turned off and the readout properties are not destructive for double ferroelectric stack. perovskite Lead Zirconium Titan ate (PZT) is chosen as the ferroelectric materials. The DF-MOSFET struc- ture, value of on-state current Ion=10-2, off-state current Ioff=10-15, and memory Windows MW=0.9V for memory applications. In the barrier layer of HDF-MOSFET structure, from composite materials that have used TiO2 =60% and HfO2 =40%, the amount of Ion=10-4.8, Ioff=10-35.2 and Ion/Ioff = 2.51×1035 is obtained, which is a suitable application for high frequency.

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